Invention Grant
- Patent Title: Hybrid memory
- Patent Title (中): 混合记忆
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Application No.: US13725733Application Date: 2012-12-21
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Publication No.: US09087577B2Publication Date: 2015-07-21
- Inventor: Yu-Wei Ting , Chun-Yang Tsai , Kuo-Ching Huang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G11C13/00
- IPC: G11C13/00 ; G11C14/00
Abstract:
A two-switch hybrid memory cell device includes a storage node connected between one terminal of a first switch and a gate of a second switch. The device also includes a resistive switching device connected to the storage node. The resistive switching device is to act as a capacitance by being set to a high resistive state when the memory cell is in a dynamic mode.
Public/Granted literature
- US20140177318A1 Hybrid Memory Public/Granted day:2014-06-26
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