Invention Grant
US09087607B2 Implementing sense amplifier for sensing local write driver with bootstrap write assist for SRAM arrays
有权
实现用于感测本地写入驱动器的读出放大器,用于对SRAM阵列的自举写入辅助
- Patent Title: Implementing sense amplifier for sensing local write driver with bootstrap write assist for SRAM arrays
- Patent Title (中): 实现用于感测本地写入驱动器的读出放大器,用于对SRAM阵列的自举写入辅助
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Application No.: US14077559Application Date: 2013-11-12
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Publication No.: US09087607B2Publication Date: 2015-07-21
- Inventor: Chad A. Adams , Elizabeth L. Gerhard , Jeffrey M. Scherer
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Joan Pennington
- Main IPC: G11C11/419
- IPC: G11C11/419 ; G06F17/50

Abstract:
A method and circuit for implementing sense amplifiers for sensing local write driver with bootstrap write assist for Static Random Access Memory (SRAM) arrays, and a design structure on which the subject circuit resides are provided. The circuit includes a sense amplifier used in both read and write operations with a write assist boost circuitry. The sense amplifier captures and amplifies write data at a selected SRAM cell column and drives the write data onto local bit lines. The write assist boost circuitry temporarily supplies an increased device voltage differential to the SRAM cell during write operations to significantly increase SRAM cell write ability.
Public/Granted literature
- US20150131368A1 IMPLEMENTING SENSE AMPLIFIER FOR SENSING LOCAL WRITE DRIVER WITH BOOTSTRAP WRITE ASSIST FOR SRAM ARRAYS Public/Granted day:2015-05-14
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