Invention Grant
- Patent Title: Asymmetric high voltage capacitor
- Patent Title (中): 不对称高压电容器
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Application No.: US13849806Application Date: 2013-03-25
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Publication No.: US09087648B2Publication Date: 2015-07-21
- Inventor: John Bultitude , Lonnie G. Jones , James R. Magee , Kitae Park
- Applicant: Kemet Electronics Corporation
- Applicant Address: US SC Simpsonville
- Assignee: Kemet Electronics Corporation
- Current Assignee: Kemet Electronics Corporation
- Current Assignee Address: US SC Simpsonville
- Agency: Perkins Law Firm, LLC
- Agent Joseph T. Guy
- Main IPC: H01G4/30
- IPC: H01G4/30 ; H01G4/005 ; H01G4/012 ; H01G4/232

Abstract:
An improved multi-layered ceramic capacitor, and method of making the multi-layered ceramic capacitor, is described. The capacitor has an active area comprising first layers and second layers in alternating parallel arrangement with dielectric there between. The first layer comprises a first active electrode and a first floating electrode in a common plane and the second layer comprises a second active electrode and a second floating electrode in a second common plane. At least one shield layer is adjacent to an outermost first layer of the first layers wherein the shield layer has a first projection and the first layers have a second projection wherein the first projection and the second projection are different.
Public/Granted literature
- US20130250473A1 Asymmetric High Voltage Capacitor Public/Granted day:2013-09-26
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