Invention Grant
- Patent Title: Method for fabricating field emission cathode structure
- Patent Title (中): 场致发射阴极结构的制造方法
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Application No.: US14178188Application Date: 2014-02-11
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Publication No.: US09087667B2Publication Date: 2015-07-21
- Inventor: Peng Liu , Shou-Shan Fan
- Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: CN2010106073826 20101227
- Main IPC: H01J9/02
- IPC: H01J9/02 ; H01J31/12

Abstract:
A method for fabricating the field emission cathode structure includes following steps. A first carbon nanotube structure is provided. The first carbon nanotube structure is suspended. A voltage is applied to heat the first carbon nanotube structure to form a temperature gradient. A number of second carbon nanotubes are grown on a surface of the first carbon nanotube structure to form a second carbon nanotube structure.
Public/Granted literature
- US20140166494A1 METHOD FOR FABRICATING FIELD EMISSION CATHODE STRUCTURE Public/Granted day:2014-06-19
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