Invention Grant
US09087679B2 Uniformity tuning capable ESC grounding kit for RF PVD chamber
有权
用于RF PVD室的均匀调谐ESC接地套件
- Patent Title: Uniformity tuning capable ESC grounding kit for RF PVD chamber
- Patent Title (中): 用于RF PVD室的均匀调谐ESC接地套件
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Application No.: US13365876Application Date: 2012-02-03
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Publication No.: US09087679B2Publication Date: 2015-07-21
- Inventor: Muhammad M. Rasheed , Rongjun Wang , Thanh X. Nguyen , Alan A. Ritchie
- Applicant: Muhammad M. Rasheed , Rongjun Wang , Thanh X. Nguyen , Alan A. Ritchie
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: C23C14/34
- IPC: C23C14/34 ; H01J37/34 ; H01J37/32
Abstract:
Embodiments of the invention generally relate to a grounding kit for a semiconductor processing chamber, and a semiconductor processing chamber having a grounding kit. More specifically, embodiments described herein relate to a grounding kit which creates an asymmetric grounding path selected to significantly reduce the asymmetries caused by an off center RF power delivery.
Public/Granted literature
- US20120211354A1 UNIFORMITY TUNING CAPABLE ESC GROUNDING KIT FOR RF PVD CHAMBER Public/Granted day:2012-08-23
Information query
IPC分类:
