Invention Grant
- Patent Title: Hafnium-containing and zirconium-containing precursors for vapor deposition
- Patent Title (中): 含铪和锆的气相沉积前体
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Application No.: US14009812Application Date: 2011-04-06
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Publication No.: US09087690B2Publication Date: 2015-07-21
- Inventor: Venkateswara R. Pallem , Christian Dussarrat
- Applicant: Venkateswara R. Pallem , Christian Dussarrat
- Applicant Address: US CA Fremont
- Assignee: American Air Liquide, Inc.
- Current Assignee: American Air Liquide, Inc.
- Current Assignee Address: US CA Fremont
- Agent Patricia E. McQueeney
- International Application: PCT/US2011/031360 WO 20110406
- International Announcement: WO2012/138332 WO 20121011
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C07F7/00 ; C23C16/40

Abstract:
Disclosed are hafnium-containing and zirconium-containing precursors and methods of synthesizing the same. The compounds may be used to deposit hafnium, zirconium, hafnium oxide, and zirconium oxide containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition.
Public/Granted literature
- US20140170861A1 HAFNIUM-CONTAINING AND ZIRCONIUM-CONTAINING PRECURSORS FOR VAPOR DEPOSITION Public/Granted day:2014-06-19
Information query
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