Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13103353Application Date: 2011-05-09
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Publication No.: US09087712B2Publication Date: 2015-07-21
- Inventor: Toru Matsuoka
- Applicant: Toru Matsuoka
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-207572 20100916
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L27/02 ; H01L29/08 ; H01L29/10 ; H01L29/41 ; H01L27/06 ; H01L25/07 ; H02M3/158

Abstract:
The present invention provides a semiconductor device capable of selecting a desired circuit (step-down circuit (or step-up/step-down circuit) and step-up circuit) on the user side at low cost. A semiconductor device according to the present invention includes a diode element and a switching element (IGBT). An anode terminal of the diode element and one main electrode terminal of the switching element are adjacently arranged at a predetermined distance from each other. In addition, a cathode terminal of the diode element and the other main electrode terminal of the switching element are adjacently arranged at another predetermined distance from each other.
Public/Granted literature
- US20120068329A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-03-22
Information query
IPC分类: