Invention Grant
- Patent Title: Semiconductor device with shared region
- Patent Title (中): 具有共享区域的半导体器件
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Application No.: US13650484Application Date: 2012-10-12
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Publication No.: US09087713B2Publication Date: 2015-07-21
- Inventor: Sujit Banerjee
- Applicant: Power Integrations, Inc.
- Applicant Address: US CA San Jose
- Assignee: Power Integrations, Inc.
- Current Assignee: Power Integrations, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L29/808
- IPC: H01L29/808 ; H01L27/07 ; H01L29/861 ; H01L29/06 ; H02M1/32 ; H02M1/36 ; H02M1/00
Abstract:
A semiconductor device having a JFET and diode, includes a substrate, a second well region, and a second doped region that are of a first conductivity type. The JFET also includes a first well region, a first doped region, and a shared region that are of the second conductivity type. The second well region is disposed in the substrate adjacent to the first well region. A source of the JFET includes the first doped region disposed in the first well region. An anode of the diode includes the second doped region disposed in the second well region. Both a drain of the JFET and a cathode of the diode include the shared region disposed in the first well region. A diode current flows along a first lateral axis of the device while a JFET current flows along a second lateral axis of the device.
Public/Granted literature
- US20140104888A1 SEMICONDUCTOR DEVICE WITH SHARED REGION Public/Granted day:2014-04-17
Information query
IPC分类:
