Invention Grant
US09087721B2 Devices including fin transistors robust to gate shorts and methods of making the same
有权
包括对栅极短路稳健的鳍式晶体管的器件及其制造方法
- Patent Title: Devices including fin transistors robust to gate shorts and methods of making the same
- Patent Title (中): 包括对栅极短路稳健的鳍式晶体管的器件及其制造方法
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Application No.: US14498527Application Date: 2014-09-26
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Publication No.: US09087721B2Publication Date: 2015-07-21
- Inventor: Werner Juengling
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder, P.C.
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L27/108 ; H01L29/66 ; H01L29/78 ; H01L29/423
Abstract:
Disclosed are methods, systems and devices, including a method that includes the acts of etching an inter-row trench in a substrate, substantially or entirely filling the inter-row trench with a dielectric material, and forming a fin and a insulating projection at least in part by etching a gate trench in the substrate. In some embodiments, the insulating projection includes at least some of the dielectric material in the inter-row trench.
Public/Granted literature
- US20150008535A1 DEVICES INCLUDING FIN TRANSISTORS ROBUST TO GATE SHORTS AND METHODS OF MAKING THE SAME Public/Granted day:2015-01-08
Information query
IPC分类:
