According to one embodiment, a semiconductor memory device includes a plurality of first interconnects extending in a first direction, a plurality of second interconnects extending in a second direction crossing the first direction, and a memory element provided between the first interconnect and the second interconnect at a portion where the first interconnect crosses the second interconnect. The memory element includes a variable resistance film and a stress generating film stacked with the variable resistance film to apply stress to the variable resistance film in a surface direction.