Invention Grant
- Patent Title: Device and method for forming sharp extension region with controllable junction depth and lateral overlap
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Application No.: US13611387Application Date: 2012-09-12
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Publication No.: US09087772B2Publication Date: 2015-07-21
- Inventor: Isaac Lauer , Effendi Leobandung , Ghavam G. Shahidi
- Applicant: Isaac Lauer , Effendi Leobandung , Ghavam G. Shahidi
- Applicant Address: US NY Amronk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Amronk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L21/265 ; H01L21/306 ; H01L21/3065 ; H01L29/66 ; H01L29/78
Abstract:
A method for forming a semiconductor device includes forming a gate stack on a monocrystalline substrate. A surface of the substrate adjacent to the gate stack and below a portion of the gate stack is amorphorized. The surface is etched to selectively remove a thickness of amorphorized portions to form undercuts below the gate stack. A layer is epitaxially grown in the thickness and the undercuts to form an extension region for the semiconductor device. Devices are also provided.
Public/Granted literature
Information query
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