A process control monitor for determination of alignment between layers of a semiconductor structure includes a patterned layer having a plurality of lines formed on a base layer, the plurality of lines enclosed within a circle. A photo-resist layer is deposited on top of the base layer and over the patterned layer. The photo-resist layer may be patterned to include an opening that exposes a portion of the base layer adjacent the patterned layer and that exposes a portion of the patterned layer. Alignment between the patterned layer and the patterned photo-resist layer may be determined according to a contrast between the exposed portion of the base layer and the exposed portion of the patterned layer.