Invention Grant
- Patent Title: Ultra-fast breakover diode
- Patent Title (中): 超快断路二极管
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Application No.: US14451429Application Date: 2014-08-05
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Publication No.: US09087809B2Publication Date: 2015-07-21
- Inventor: Subhas Chandra Bose Jayappa Veeramma
- Applicant: IXYS Corporation
- Applicant Address: US CA Milpitas
- Assignee: IXYS Corporation
- Current Assignee: IXYS Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Imperium Patent Works
- Agent T. Lester Wallace; Amir V. Adibi
- Main IPC: H01L29/87
- IPC: H01L29/87 ; H01L29/06 ; H01L29/417 ; H01L29/74

Abstract:
An ultra-fast breakover diode has a turn on time TON that is less than 0.3 microseconds, where the forward breakover voltage is greater than +400 volts and varies less than one percent per ten degrees Celsius change. In another aspect of the invention, a breakover diode has a reverse breakdown voltage that is greater, in absolute magnitude, than the forward breakover voltage, where the forward breakover voltage is greater than +400 volts. Yet another aspect of the invention involves a string of series-connected breakover diode dice, along with a resistor string, in a packaged circuit. The packaged circuit acts like a single breakover diode having a large forward breakover voltage and a comparably large reverse breakdown voltage, even though the packaged circuit includes no discrete high voltage reverse breakdown diode. The packaged circuit is usable to supply a triggering current to a thyristor in a voltage protection circuit.
Public/Granted literature
- US20140346559A1 Ultra-Fast Breakover Diode Public/Granted day:2014-11-27
Information query
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