Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14043823Application Date: 2013-10-01
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Publication No.: US09087822B2Publication Date: 2015-07-21
- Inventor: Futoshi Furuta , Kenichi Osada
- Applicant: Hitachi, Ltd.
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2012-219919 20121002
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L27/02

Abstract:
To provide a semiconductor device having a high efficiency of arranging a TSV, there is provided a semiconductor device which is stacked with a semiconductor chip, and in which the semiconductor chips contiguous each other are electrically connected by plural TSVs, the semiconductor chip includes a core circuit and plural IO circuits arranged at a surrounding thereof, the TSV is arranged in the core circuit, and a pitch of arranging the TSVs is an integer-fold of a cell pitch of a library configuring the core circuit.
Public/Granted literature
- US20140091478A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-04-03
Information query
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