Invention Grant
- Patent Title: Semiconductor device and electronic apparatus
- Patent Title (中): 半导体器件和电子设备
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Application No.: US14189423Application Date: 2014-02-25
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Publication No.: US09087888B2Publication Date: 2015-07-21
- Inventor: Masashi Yanagita , Shigeru Kanematsu
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sony Corporation
- Priority: JP2013-044019 20130306
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/78 ; H01L29/40 ; H01L29/423 ; H01L29/66 ; H01L29/20
Abstract:
A semiconductor device includes: a device region having a semiconductor layer that includes a channel section; a device peripheral region adjoining the device region; a gate electrode provided within the device region, and having a boundary section that spans the device region and the device peripheral region; a conductive layer provided between the gate electrode and the semiconductor layer; and an insulating layer provided between the gate electrode in the boundary section and the semiconductor layer.
Public/Granted literature
- US20140252417A1 SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS Public/Granted day:2014-09-11
Information query
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