Invention Grant
- Patent Title: Semiconductor devices with 2DEG and 2DHG
- Patent Title (中): 具有2DEG和2DHG的半导体器件
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Application No.: US13812725Application Date: 2011-06-07
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Publication No.: US09087889B2Publication Date: 2015-07-21
- Inventor: Akira Nakajima , Sankara Narayanan Ekkanath Madathil
- Applicant: Akira Nakajima , Sankara Narayanan Ekkanath Madathil
- Applicant Address: GB Sheffield
- Assignee: The University of Sheffield
- Current Assignee: The University of Sheffield
- Current Assignee Address: GB Sheffield
- Agency: Fraser Clemens Martin & Miller LLC
- Agent William J. Clemens
- Priority: GB1012622.5 20100728
- International Application: PCT/GB2011/051065 WO 20110607
- International Announcement: WO2012/013943 WO 20120202
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L27/095 ; H01L29/10 ; H01L29/423 ; H01L29/78 ; H01L29/20
Abstract:
A semiconductor device comprises three semiconductor layers. The semiconductor layers are arranged to form a 2DHG and a 2DEG separated by a polarization layer. The device comprises a plurality of electrodes: first and second electrodes electrically connected to the 2DHG so that current can flow between them via the 2DHG and a third electrode electrically connected to the 2DEG so that when a positive voltage is applied to the third electrode, with respect to at least one of the other electrodes, the 2DEG and the 2DHG will be at least partially depleted.
Public/Granted literature
- US20130221409A1 SEMICONDUCTOR DEVICES WITH 2DEG AND 2DHG Public/Granted day:2013-08-29
Information query
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