Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the same
- Patent Title (中): 半导体器件及其制造方法相同
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Application No.: US14016958Application Date: 2013-09-03
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Publication No.: US09087910B2Publication Date: 2015-07-21
- Inventor: Kenichiro Toratani , Masayuki Tanaka
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2012-196428 20120906
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L29/51 ; H01L29/423 ; H01L29/66 ; H01L29/788 ; H01L21/28 ; H01L27/115
Abstract:
According to one embodiment, a nonvolatile semiconductor storage device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a charge accumulation film formed on the first insulating film, a second insulating film formed on the charge accumulation film, and a control electrode formed on a second insulating film, and one of the first and the second insulating film includes a layer containing nitrogen, a layer that is formed on the layer containing nitrogen and that includes a first oxygen containing aluminum atoms and oxygen atoms, and a layer that is formed on the layer including the first oxygen and that includes a second oxygen containing silicon atoms and oxygen atoms; and a concentration of the aluminum atoms is from 1E12 atoms/cm2 to 1E16 atoms/cm2.
Public/Granted literature
- US20140061769A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2014-03-06
Information query
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