Invention Grant
- Patent Title: Method for keyhole repair in replacement metal gate integration through the use of a printable dielectric
- Patent Title (中): 通过使用可印刷电介质替代金属门集成的锁孔修复方法
-
Application No.: US14594745Application Date: 2015-01-12
-
Publication No.: US09087916B2Publication Date: 2015-07-21
- Inventor: Josephine B. Chang , Michael A. Guillorn , Jeffrey W. Sleight
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Michael J. Chang, LLC
- Agent Louis J. Percello
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L21/8234 ; H01L21/84 ; H01L29/66 ; H01L29/16 ; H01L21/027 ; H01L21/02
Abstract:
A method of fabricating a FET device is provided that includes the following steps. A wafer is provided. At least one active area is formed in the wafer. A plurality of dummy gates is formed over the active area. Spaces between the dummy gates are filled with a dielectric gap fill material such that one or more keyholes are formed in the dielectric gap fill material between the dummy gates. The dummy gates are removed to reveal a plurality of gate canyons in the dielectric gap fill material. A mask is formed that divides at least one of the gate canyons, blocks off one or more of the keyholes and leaves one or more of the keyholes un-blocked. At least one gate stack material is deposited onto the wafer filling the gate canyons and the un-blocked keyholes. A FET device is also provided.
Public/Granted literature
Information query
IPC分类:
