Invention Grant
- Patent Title: Monolithic compound semiconductor structure
- Patent Title (中): 单片化合物半导体结构
-
Application No.: US13662034Application Date: 2012-10-26
-
Publication No.: US09087923B2Publication Date: 2015-07-21
- Inventor: Cheng-Kuo Lin , Szu-Ju Li , Rong-Hao Syu , Shu-Hsiao Tsai
- Applicant: WIN Semiconductors Corp.
- Applicant Address: TC Kuei Shan Hsiang, Tao Yuan Shen
- Assignee: WIN SMICONDUTOR CORP.
- Current Assignee: WIN SMICONDUTOR CORP.
- Current Assignee Address: TC Kuei Shan Hsiang, Tao Yuan Shen
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW101121120A 20120613
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/8252 ; H01L29/205 ; H01L27/06 ; H01L29/737 ; H01L29/87
Abstract:
A monolithic compound semiconductor structure is disclosed. The monolithic compound semiconductor structure comprises a substrate, an n-type FET epitaxial structure, an n-type etching-stop layer, a p-type insertion layer, and an npn HBT epitaxial structure, and it can be used to form an FET, an HBT, or a thyristor.
Public/Granted literature
- US20130334564A1 MONOLITHIC COMPOUND SEMICONDUCTOR STRUCTURE Public/Granted day:2013-12-19
Information query
IPC分类:
