Invention Grant
- Patent Title: Selective self-aligned plating of heterojunction solar cells
- Patent Title (中): 异质结太阳能电池的选择性自对准电镀
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Application No.: US14031732Application Date: 2013-09-19
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Publication No.: US09087941B2Publication Date: 2015-07-21
- Inventor: Bahman Hekmatshoartabari , Warren S. Rieutort-Louis
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L31/0224 ; H01L31/20 ; H01L31/18 ; H01L31/0216

Abstract:
A method for forming contacts on a photovoltaic device includes forming a heterojunction cell including a substrate, a passivation layer and a doped layer and forming a transparent conductor on the cell. A patterned barrier layer is formed on the transparent conductor and has openings therein wherein the transparent conductor is exposed through the openings in the barrier layer. A conductive contact is grown through the openings in the patterned barrier layer by a selective plating process.
Public/Granted literature
- US20150075598A1 SELECTIVE SELF-ALIGNED PLATING OF HETEROJUNCTION SOLAR CELLS Public/Granted day:2015-03-19
Information query
IPC分类: