Invention Grant
US09087954B2 Method for producing the pentanary compound semiconductor CZTSSe, and thin-film solar cell
有权
制备五元化合物半导体CZTSSe的方法和薄膜太阳能电池
- Patent Title: Method for producing the pentanary compound semiconductor CZTSSe, and thin-film solar cell
- Patent Title (中): 制备五元化合物半导体CZTSSe的方法和薄膜太阳能电池
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Application No.: US14002686Application Date: 2012-02-22
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Publication No.: US09087954B2Publication Date: 2015-07-21
- Inventor: Stefan Jost , Jorg Palm
- Applicant: Stefan Jost , Jorg Palm
- Applicant Address: FR Courbevoie
- Assignee: SAINT-GOBAIN GLASS FRANCE
- Current Assignee: SAINT-GOBAIN GLASS FRANCE
- Current Assignee Address: FR Courbevoie
- Agency: Steinfl & Bruno LLP
- Priority: EP11157718 20110310
- International Application: PCT/EP2012/052993 WO 20120222
- International Announcement: WO2012/119857 WO 20120913
- Main IPC: C30B1/02
- IPC: C30B1/02 ; H01L31/18 ; H01L21/02 ; H01L31/065 ; H01L31/032

Abstract:
A method for producing a compound semiconductor composed of pentanary kesterite/stannite of the type Cu2ZnSn(S,Se)4 is described. The method has the following steps: producing at least one precursor layer stack consisting of a first precursor layer and a second precursor layer; thermally treating the at least one precursor layer stack in a process chamber; and feeding at least one process gas into the process chamber during the thermal treatment of the at least one precursor layer stack. Furthermore, a thin-film solar cell with an absorber consisting of the pentanary compound semiconductor Cu2ZnSn(S,Se)4 on a body is described.
Public/Granted literature
- US20140053896A1 METHOD FOR PRODUCING THE PENTANARY COMPOUND SEMICONDUCTOR CZTSSE, AND THIN-FILM SOLAR CELL Public/Granted day:2014-02-27
Information query
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