Invention Grant
US09087957B2 Method for producing an emitter structure and emitter structures resulting therefrom
有权
用于产生由其产生的发射极结构和发射极结构的方法
- Patent Title: Method for producing an emitter structure and emitter structures resulting therefrom
- Patent Title (中): 用于产生由其产生的发射极结构和发射极结构的方法
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Application No.: US12608761Application Date: 2009-10-29
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Publication No.: US09087957B2Publication Date: 2015-07-21
- Inventor: Kris Van Nieuwenhuysen , Filip Duerinckx
- Applicant: Kris Van Nieuwenhuysen , Filip Duerinckx
- Applicant Address: BE Leuven
- Assignee: IMEC
- Current Assignee: IMEC
- Current Assignee Address: BE Leuven
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L31/0236 ; H01L31/068

Abstract:
A method for forming an emitter structure on a substrate and emitter structures resulting therefrom is disclosed. In one aspect, a method includes forming, on the substrate, a first layer comprising semiconductor material. The method also includes texturing a surface of the first layer, thereby forming a first emitter region from the first layer, wherein the first emitter region has a first textured surface. The method also includes forming a second emitter region at the first textured surface, the second emitter region having a second textured surface.
Public/Granted literature
- US20100139763A1 METHOD FOR PRODUCING AN EMITTER STRUCTURE AND EMITTER STRUCTURES RESULTING THEREFROM Public/Granted day:2010-06-10
Information query
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