Invention Grant
- Patent Title: Light-emitting device
- Patent Title (中): 发光装置
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Application No.: US14054051Application Date: 2013-10-15
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Publication No.: US09087964B2Publication Date: 2015-07-21
- Inventor: Kaoru Hatano , Naoyuki Senda , Manabu Niboshi , Katsuhiro Kikuchi , Shinichi Kawato , Takashi Ochi , Yuto Tsukamoto , Tomohiro Kosaka , Tomofumi Osaki
- Applicant: Kaoru Hatano , Naoyuki Senda , Manabu Niboshi , Katsuhiro Kikuchi , Shinichi Kawato , Takashi Ochi , Yuto Tsukamoto , Tomohiro Kosaka , Tomofumi Osaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken JP Osaka-shi, Osaka
- Assignee: Semiconductor Energy Laboratory Co., Ltd.,Sharp Kabushiki Kaisha
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.,Sharp Kabushiki Kaisha
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken JP Osaka-shi, Osaka
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2012-230151 20121017
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L29/18 ; H01L33/36 ; H01L27/32 ; H01L51/50 ; H01L51/52

Abstract:
Occurrence of a crosstalk phenomenon is suppressed in a light-emitting device including a tandem element. A light-emitting device includes a first lower electrode and a second lower electrode over an insulating layer; a partition which is formed over the insulating layer and positioned between the first lower electrode and the second lower electrode; a projecting object formed over the partition; a first light-emitting unit over each of the first lower electrode, the partition, the projecting object, and the second lower electrode; an intermediate layer over the first light-emitting unit; a second light-emitting unit over the intermediate layer; and an upper electrode over the second light-emitting unit. A recess is formed by a side surface of the projecting object and a side surface of the partition.
Public/Granted literature
- US20140103368A1 LIGHT-EMITTING DEVICE Public/Granted day:2014-04-17
Information query
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