Invention Grant
- Patent Title: Semicondcutor device and method for fabricating the same
- Patent Title (中): 半切割装置及其制造方法
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Application No.: US14328401Application Date: 2014-07-10
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Publication No.: US09087984B2Publication Date: 2015-07-21
- Inventor: Ji-Ho Park
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0079600 20110810
- Main IPC: H01L43/12
- IPC: H01L43/12 ; H01L43/02 ; H01L43/08 ; H01L27/22
Abstract:
A semiconductor device includes a pinned layer having a magnetic direction permanently set to a first direction, a tunnel insulating layer arranged on the pinned layer, a free layer arranged on the tunnel insulating layer and having a changeable magnetic direction, and a magnetic induction layer formed to surround the pinned layer and have a magnetic direction permanently set to a second direction different from the first direction.
Public/Granted literature
- US20140322829A1 SEMICONDCUTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2014-10-30
Information query
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