Invention Grant
- Patent Title: Fullerene-doped nanostructures and methods therefor
- Patent Title (中): 富勒烯掺杂的纳米结构及其方法
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Application No.: US14021796Application Date: 2013-09-09
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Publication No.: US09087995B2Publication Date: 2015-07-21
- Inventor: Ajay Virkar , Melburne C. LeMieux , Zhenan Bao
- Applicant: The Board of Trustees of the Leland Stanford Junior University
- Applicant Address: US CA Palo Alto
- Assignee: The Board of Trustees of the Leland Stanford Junior University
- Current Assignee: The Board of Trustees of the Leland Stanford Junior University
- Current Assignee Address: US CA Palo Alto
- Agency: Crawford Maunu PLLC
- Main IPC: H01L51/40
- IPC: H01L51/40 ; H01L51/00 ; C01B31/02 ; B82Y30/00 ; B82Y40/00

Abstract:
Nanostructures are doped to set conductivity characteristics. In accordance with various example embodiments, nanostructures such as carbon nanotubes are doped with a halogenated fullerene type of dopant material. In some implementations, the dopant material is deposited from solution or by vapor deposition, and used to dope the nanotubes to increase the thermal and/or electrical conductivity of the nanotubes.
Public/Granted literature
- US20140138612A1 FULLERENE-DOPED NANOSTRUCTURES AND METHODS THEREFOR Public/Granted day:2014-05-22
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