Invention Grant
- Patent Title: Refresh control circuit of semiconductor apparatus
- Patent Title (中): 刷新半导体装置的控制电路
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Application No.: US13724597Application Date: 2012-12-21
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Publication No.: US09093174B2Publication Date: 2015-07-28
- Inventor: Jong Man Im
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: Sk Hynix Inc.
- Current Assignee: Sk Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2012-0125570 20121107
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/406 ; G11C11/4094 ; G11C7/22

Abstract:
A refresh control circuit of a semiconductor apparatus includes a variable delay unit configured to delay a signal that is activated quickest among a plurality of row address strobe signals activated at a predetermined time interval by a predetermined time, and to generate a preliminary pulse signal, and a piled delay unit configured to delay the preliminary pulse signal by various times, and to generate a plurality of refresh period pulse signals that are sequentially activated.
Public/Granted literature
- US20140126311A1 REFRESH CONTROL CIRCUIT OF SEMICONDUCTOR APPARATUS Public/Granted day:2014-05-08
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