Invention Grant
- Patent Title: Method of producing ferroelectric thin film-forming composition and application of the same
- Patent Title (中): 制备铁电薄膜形成组合物的方法及其应用
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Application No.: US14181675Application Date: 2014-02-16
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Publication No.: US09093198B2Publication Date: 2015-07-28
- Inventor: Toshihiro Doi , Hideaki Sakurai , Nobuyuki Soyama
- Applicant: MITSUBISHI MATERIALS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Locke Lord LLP
- Agent James E. Armstrong, IV; Nicholas J. DiCeglie, Jr.
- Priority: JP2013-061723 20130325
- Main IPC: C08F222/40
- IPC: C08F222/40 ; C08F24/00 ; H01B3/44 ; H01L41/187 ; H01L41/318 ; C23C18/12
Abstract:
A method of preparing a ferroelectric thin film-forming composition, specifically, a method of preparing a PZT thin film-forming composition includes: a step of allowing composition precursor raw materials, which contain PZT precursor substances at a concentration of 23 to 38 mass % in terms of oxides in 100 mass % of the composition precursor raw materials, and a high-molecular compound to react with each other to obtain a PZT thin film-forming composition precursor; and a step of aging the PZT thin film-forming composition precursor at a temperature of 0 to 10° C. for at least 30 days.
Public/Granted literature
- US20140288233A1 METHOD OF PRODUCING FERROELECTRIC THIN FILM-FORMING COMPOSITION AND APPLICATION OF THE SAME Public/Granted day:2014-09-25
Information query
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