Invention Grant
- Patent Title: Method of controlling silicon oxide film thickness
- Patent Title (中): 控制氧化硅膜厚度的方法
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Application No.: US14211695Application Date: 2014-03-14
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Publication No.: US09093267B2Publication Date: 2015-07-28
- Inventor: Yuanchang Zhang
- Applicant: Yuanchang Zhang
- Applicant Address: US NJ Red Bank
- Assignee: NATCORE TECHNOLOGY, INC.
- Current Assignee: NATCORE TECHNOLOGY, INC.
- Current Assignee Address: US NJ Red Bank
- Agency: Winstead PC
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469 ; H01L21/02 ; C23C18/06 ; C23C18/12 ; H01L31/0216 ; H01L31/068 ; C25D5/02 ; C25D17/06
Abstract:
A deposition process for coating a substrate with films of varying thickness on a substrate can be achieved. The thickness of the film deposition can be controlled by the separation between the substrate and a curtain. Different separation distances between the substrate and curtain in the same chemical bath will result in different film thicknesses depositing on the substrate.
Public/Granted literature
- US20140199857A1 Method of Controlling Silicon Oxide Film Thickness Public/Granted day:2014-07-17
Information query
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