Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14061417Application Date: 2013-10-23
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Publication No.: US09093277B2Publication Date: 2015-07-28
- Inventor: Yoshihiro Yamaguchi
- Applicant: MITSUBISHI ELECTRIC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2013-021036 20130206
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/48 ; H01L23/13 ; H01L23/31 ; H01L23/373
Abstract:
The present invention includes a plate electrode to be a plate-shaped electrode member, an epoxy sheet serving as an integrated insulating sheet and provided on the plate electrode, a double printed board serving as a control board and provided on the epoxy sheet, and a board integrated electrode in which the plate electrode and the double printed board are formed integrally by the epoxy sheet.
Public/Granted literature
- US20140217600A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-08-07
Information query
IPC分类:
