Invention Grant
- Patent Title: High voltage low current surface emitting light emitting diode
- Patent Title (中): 高压低电流表面发光二极管
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Application No.: US13190094Application Date: 2011-07-25
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Publication No.: US09093293B2Publication Date: 2015-07-28
- Inventor: James Ibbetson , Sten Heikman , Julio Garceran , George Brandes
- Applicant: James Ibbetson , Sten Heikman , Julio Garceran , George Brandes
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L25/075 ; H01L33/00 ; H01L33/62
Abstract:
A light emitting diode chip includes a submount, a reflective layer on the submount, an insulating layer on the reflective layer opposite the submount, and a plurality of sub-LEDs on the insulating layer. Each of the sub-LEDs includes a first face adjacent to the submount and a transparent contact on the first face between the sub-LED and the insulating layer and electrical interconnects between adjacent ones of the sub-LEDs.
Public/Granted literature
- US20120043563A1 High Voltage Low Current Surface Emitting Light Emitting Diode Public/Granted day:2012-02-23
Information query
IPC分类:
