Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14116067Application Date: 2012-03-07
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Publication No.: US09093361B2Publication Date: 2015-07-28
- Inventor: Shiro Hino , Naruhisa Miura , Akihiko Furukawa , Yukiyasu Nakao , Tomokatsu Watanabe , Masayoshi Tarutani , Yuji Ebiike , Masayuki Imaizumi , Sunao Aya
- Applicant: Shiro Hino , Naruhisa Miura , Akihiko Furukawa , Yukiyasu Nakao , Tomokatsu Watanabe , Masayoshi Tarutani , Yuji Ebiike , Masayuki Imaizumi , Sunao Aya
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-139251 20110623
- International Application: PCT/JP2012/055792 WO 20120307
- International Announcement: WO2012/176503 WO 20121227
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/16 ; H01L29/45 ; H01L29/66 ; H01L29/78 ; H01L21/04 ; H01L29/417 ; H01L29/06
Abstract:
A semiconductor device capable of suppressing time variation of a threshold voltage and a method of manufacturing the same. A semiconductor device according to the present invention comprises a drift layer formed on a semiconductor substrate, first well regions formed in a surface layer of the drift layer, being apart from one another, a gate insulating film formed, extending on the drift layer and each of the first well regions, a gate electrode selectively formed on the gate insulating film, a source contact hole penetrating through the gate insulating film and reaching the inside of each of the first well regions, and a residual compressive stress layer formed on at least a side surface of the source contact hole, in which a compressive stress remains.
Public/Granted literature
- US20140077232A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2014-03-20
Information query
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