Invention Grant
- Patent Title: Conductive diffusion barrier structure for ohmic contacts
- Patent Title (中): 用于欧姆接触的导电扩散阻挡结构
-
Application No.: US13965294Application Date: 2013-08-13
-
Publication No.: US09093373B2Publication Date: 2015-07-28
- Inventor: Chin-Chia Chang , Han-Wei Yang , Chen-Chung Lai , Kang-Min Kuo , Bor-Zen Tien
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/02 ; H01L21/265 ; H01L27/146 ; H01L29/78 ; H01L21/762
Abstract:
An integrated circuit includes a p-type region formed beneath a surface of a semiconductor substrate, and an n-type region formed beneath the surface of the semiconductor substrate. The n-type region meets the p-type region at a p-n junction. A diffusion barrier structure, which is beneath the surface of the semiconductor substrate and extends along a side of the p-n junction, limits lateral diffusion between the p-type region and n-type region.
Public/Granted literature
- US20150048507A1 CONDUCTIVE DIFFUSION BARRIER STRUCTURE FOR OHMIC CONTACTS Public/Granted day:2015-02-19
Information query
IPC分类:
