Invention Grant
- Patent Title: Metal gate structure and method
- Patent Title (中): 金属门结构及方法
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Application No.: US13839631Application Date: 2013-03-15
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Publication No.: US09093375B2Publication Date: 2015-07-28
- Inventor: Hsiu-Jung Yen , Jen-Pan Wang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L27/11
- IPC: H01L27/11 ; H01L21/28 ; H01L29/49 ; H01L29/66 ; H01L49/02 ; H01L27/06 ; H01L29/51
Abstract:
A semiconductor structure comprises a metal gate structure formed in a substrate, wherein the metal gate structure comprises a first film formed of a first material and formed on a bottom and sidewalls of a gate trench, a second film formed of a second material and formed over the first film and a gate electrode formed over the second film. The semiconductor structure further comprises a resistor structure formed in the substrate, where the resistor structure comprises a third film formed of the first material and formed on a bottom and sidewalls of a resistor trench and a fourth film formed of the second material and formed over the third film.
Public/Granted literature
- US20140264624A1 Metal Gate Structure and Method Public/Granted day:2014-09-18
Information query
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