Invention Grant
- Patent Title: Dry etching agent and dry etching method using the same
- Patent Title (中): 干蚀刻剂和干蚀刻法使用该方法
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Application No.: US13576093Application Date: 2011-01-25
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Publication No.: US09093388B2Publication Date: 2015-07-28
- Inventor: Yasuo Hibino , Tomonori Umezaki , Akiou Kikuchi , Isamu Mori , Satoru Okamoto
- Applicant: Yasuo Hibino , Tomonori Umezaki , Akiou Kikuchi , Isamu Mori , Satoru Okamoto
- Applicant Address: JP Ube-shi
- Assignee: Central Glass Company, Limited
- Current Assignee: Central Glass Company, Limited
- Current Assignee Address: JP Ube-shi
- Agency: Crowell & Moring LLP
- Priority: JP2010-020294 20100201; JP2010-020295 20100201; JP2011-011049 20110121; JP2011-011050 20110121
- International Application: PCT/JP2011/051304 WO 20110125
- International Announcement: WO2011/093263 WO 20110804
- Main IPC: C09K13/00
- IPC: C09K13/00 ; C09K13/04 ; C09K13/08 ; B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00 ; C23F3/00 ; H01L21/311
Abstract:
A dry etching agent according to the present invention contains (A) a fluorinated propyne represented by the chemical formula: CF3C≡CX where X is H, F, Cl, Br, I, CH3, CFH2 or CF2H; and either of: (B) at least one kind of gas selected from the group consisting of O2, O3, CO, CO2, COCl2 and COF2; (C) at least one kind of gas selected from the group consisting of F2, NF3, Cl2, Br2, I2 and YFn where Y is Cl, Br or I; and n is an integer of 1 to 5; and (D) at least one kind of gas selected from the group consisting of CF4, CHF3, C2F6, C2F5H, C2F4H2, C3F8, C3F4H2, C3ClF3H and C4F8. This dry etching agent has a small environmental load and a wide process window and can be applied for high-aspect-ratio processing without special operations such as substrate excitation.
Public/Granted literature
- US20120298911A1 Dry Etching Agent and Dry Etching Method Using the Same Public/Granted day:2012-11-29
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