Invention Grant
US09093437B2 Packaged vertical power device comprising compressive stress and method of making a packaged vertical power device
有权
封装的垂直功率器件包括压缩应力和制造封装的垂直功率器件的方法
- Patent Title: Packaged vertical power device comprising compressive stress and method of making a packaged vertical power device
- Patent Title (中): 封装的垂直功率器件包括压缩应力和制造封装的垂直功率器件的方法
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Application No.: US13705041Application Date: 2012-12-04
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Publication No.: US09093437B2Publication Date: 2015-07-28
- Inventor: Ralf Otremba
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L21/50 ; H01L29/16
Abstract:
A packaged vertical semiconductive device including a compressive stress and a method of making such a packaged vertical semiconductive device are disclosed. In one embodiment an assembled device includes a carrier, a connection layer disposed on the carrier, the connection layer having a first height, and a chip disposed on the connection layer, the chip having a second height, wherein the second height is smaller than the first height.
Public/Granted literature
Information query
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