Invention Grant
- Patent Title: Method of planarizing substrate and method of manufacturing thin film transistor using the same
- Patent Title (中): 平面化基板的方法和使用其制造薄膜晶体管的方法
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Application No.: US13677172Application Date: 2012-11-14
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Publication No.: US09093535B2Publication Date: 2015-07-28
- Inventor: Hyang-Shik Kong , Seung-Bo Shim , Jin-Ho Ju , Jun-Gi Kim
- Applicant: Samsung Display Co., LTD.
- Applicant Address: KR
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR
- Agency: Innovation Counsel LLP
- Priority: KR10-2012-0014935 20120214
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L29/786 ; H01L21/02 ; H01L29/66 ; H01L21/027 ; H01L21/321
Abstract:
A method of planarizing a substrate includes forming a conductive pattern on a first surface of a base substrate, forming a positive photoresist layer on the base substrate and the conductive pattern, exposing the positive photoresist layer to light by irradiating a second surface of the base substrate opposite to the first surface with light, developing the positive photoresist layer to form a protruded portion on the conductive pattern, forming a planarizing layer on the base substrate and the protruded portion and eliminating the protruded portion.
Public/Granted literature
- US20130210202A1 METHOD OF PLANARIZING SUBSTRATE AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR USING THE SAME Public/Granted day:2013-08-15
Information query
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