Invention Grant
US09093562B2 Semiconductor composite apparatus, method for manufacturing the semiconductor composite apparatus, LED head that employs the semiconductor composite apparatus, and image forming apparatus that employs the LED head
有权
半导体复合装置，半导体复合装置的制造方法，使用该半导体复合装置的LED头，以及使用该LED头的图像形成装置
- Patent Title: Semiconductor composite apparatus, method for manufacturing the semiconductor composite apparatus, LED head that employs the semiconductor composite apparatus, and image forming apparatus that employs the LED head
- Patent Title (中): 半导体复合装置，半导体复合装置的制造方法，使用该半导体复合装置的LED头，以及使用该LED头的图像形成装置
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Application No.: US12926743Application Date: 2010-12-07
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Publication No.: US09093562B2Publication Date: 2015-07-28
- Inventor: Mitsuhiko Ogihara , Hiroyuki Fujiwara , Takahito Suzuki , Masaaki Sakuta , Ichimatsu Abiko
- Applicant: Mitsuhiko Ogihara , Hiroyuki Fujiwara , Takahito Suzuki , Masaaki Sakuta , Ichimatsu Abiko
- Applicant Address: JP Tokyo
- Assignee: OKI DATA CORPORATION
- Current Assignee: OKI DATA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Rabin & Berdo, P.C.
- Priority: JP2004-326123 20041110
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/00 ; B41J2/45 ; H01L27/15
Abstract:
A semiconductor composite apparatus includes a semiconductor thin film layer and a substrate. The semiconductor thin film layer and the substrate are bonded to each other with a layer of an alloy of a high-melting-point metal and a low-melting-point metal formed between the semiconductor thin film layer and the substrate. The alloy has a higher melting point than the low-melting-point metal. The layer of the alloy contains a product resulting from a reaction of the low-melting-point metal and a material of said semiconductor thin film layer.
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