Invention Grant
- Patent Title: Diodes with multiple junctions and fabrication methods therefor
- Patent Title (中): 具有多个结的二极管及其制造方法
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Application No.: US14072151Application Date: 2013-11-05
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Publication No.: US09093567B2Publication Date: 2015-07-28
- Inventor: Xin Lin , Hongning Yang , Jiang-Kai Zuo
- Applicant: Xin Lin , Hongning Yang , Jiang-Kai Zuo
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Lempia Summerfield Katz LLC
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L29/861 ; H01L29/66 ; H01L21/265

Abstract:
An embodiment of a diode includes a semiconductor substrate, a first contact region having a first conductivity type, a second contact region laterally spaced from the first contact region, and having a second conductivity type, an intermediate region disposed in the semiconductor substrate between the first and second contact regions, electrically connected with the first contact region, and having the first conductivity type, and a buried region disposed in the semiconductor substrate, having the second conductivity type, and electrically connected with the second contact region. The buried region extends laterally across the first contact region and the intermediate region to establish first and second junctions, respectively. The first junction has a lower breakdown voltage than the second junction.
Public/Granted literature
- US20150123236A1 Diodes with Multiple Junctions and Fabrication Methods Therefor Public/Granted day:2015-05-07
Information query
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