Invention Grant
- Patent Title: Controlling on-state current for two-terminal memory
- Patent Title (中): 控制两端存储器的通态电流
-
Application No.: US13910402Application Date: 2013-06-05
-
Publication No.: US09093635B2Publication Date: 2015-07-28
- Inventor: Kuk-Hwan Kim , Ping Lu , Chen-Chun Chen , Sung Hyun Jo
- Applicant: Crossbar, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Crossbar, Inc.
- Current Assignee: Crossbar, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Amin, Turocy & Watson, LLP
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L21/82 ; H01L21/20 ; G11C11/00 ; H01L45/00
Abstract:
Provision of fabrication, construction, and/or assembly of a memory device including a two-terminal memory portion is described herein. The two-terminal memory device fabrication can provide enhanced capabilities in connection with precisely tuning on-state current over a greater possible range.
Public/Granted literature
- US20140264236A1 CONTROLLING ON-STATE CURRENT FOR TWO-TERMINAL MEMORY Public/Granted day:2014-09-18
Information query
IPC分类:
