Invention Grant
- Patent Title: FePt-based sputtering target
- Patent Title (中): 基于FePt的溅射靶
-
Application No.: US14328016Application Date: 2014-07-10
-
Publication No.: US09095901B2Publication Date: 2015-08-04
- Inventor: Takanobu Miyashita , Yasuyuki Goto , Takamichi Yamamoto , Ryousuke Kushibiki , Masahiro Aono , Masahiro Nishiura
- Applicant: TANAKA KIKINZOKU KOGYO K.K.
- Applicant Address: JP Tokyo
- Assignee: TANAKA KIKINZOKU KOGYO K.K.
- Current Assignee: TANAKA KIKINZOKU KOGYO K.K.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2012-005695 20120113
- Main IPC: C23C14/34
- IPC: C23C14/34 ; B22F3/12 ; B22F9/08 ; C22C1/05 ; C22C5/04 ; C22C32/00 ; G11B5/851 ; B22F9/04 ; C22C1/04 ; C22C1/10 ; H01J37/34 ; C23C14/06 ; C22C38/00 ; C22C38/16

Abstract:
An FePt-based sputtering target has a structure in which an FePt-based alloy phase, a C phase containing unavoidable impurities, and a metal oxide phase containing unavoidable impurities are mutually dispersed, the FePt-based alloy phase containing Pt in an amount of 40 at % or more and 60 at % or less with the balance being Fe and unavoidable impurities, wherein C is contained in an amount of more than 0 vol % and 20 vol % or less based on the total amount of the target, the metal oxide is contained in an amount of 10 vol % or more and less than 40 vol % based on the total amount of the target, and the total content of C and the metal oxide is 20 vol % or more and 40 vol % or less based on the total amount of the target.
Public/Granted literature
- US20140318954A1 FEPT-BASED SPUTTERING TARGET Public/Granted day:2014-10-30
Information query
IPC分类: