Invention Grant
- Patent Title: Wafer scale epitaxial graphene transfer
- Patent Title (中): 晶圆尺度外延石墨烯转移
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Application No.: US13855313Application Date: 2013-04-02
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Publication No.: US09096050B2Publication Date: 2015-08-04
- Inventor: Stephen W. Bedell , Christos D. Dimitrakopoulos , Keith E. Fogel , James B. Hannon , Jeehwan Kim , Hongsik Park , Dirk Pfeiffer , Devendra K. Sadana
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L21/20
- IPC: H01L21/20 ; B32B43/00 ; H01L21/027 ; H05K3/04
Abstract:
A method for transfer of a two-dimensional material includes forming a spreading layer of a two-dimensional material on a substrate, the spreading layer having a monolayer. A stressor layer is formed on the spreading layer, and the stressor layer is configured to apply stress to a closest monolayer of the spreading layer. The closest monolayer is exfoliated by mechanically splitting the spreading layer wherein the closest monolayer remains on the stressor layer.
Public/Granted literature
- US20140291282A1 WAFER SCALE EPITAXIAL GRAPHENE TRANSFER Public/Granted day:2014-10-02
Information query
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