Invention Grant
- Patent Title: Metal interconnect modeling
- Patent Title (中): 金属互连建模
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Application No.: US13902566Application Date: 2013-05-24
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Publication No.: US09098660B2Publication Date: 2015-08-04
- Inventor: Hsiao-Tsung Yen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A method for modeling metal routing includes extracting physical parameters of a metal interconnect for a circuit design, determining a resistance value from a database of metal interconnects with the extracted physical parameters, the resistance value being at a maximum frequency of a frequency range to be simulated, modeling the interconnect with a symmetric lumped transmission line model, and defining a resistance value of the lumped transmission line model to be about 1.05-1.3 times the resistance value taken from the database.
Public/Granted literature
- US20140258955A1 Metal Interconnect Modeling Public/Granted day:2014-09-11
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