In one embodiment, a spin torque oscillator (STO) includes a reference layer having a magnetization that is capable of free in-plane rotation, a field generation layer (FGL) including at least one magnetic film having an easy magnetization plane effectively in a film plane, wherein a magnetization of the FGL is capable of in-plane rotation, and a stabilizing layer (STL) positioned on a side of the FGL opposite the reference layer, the STL including a magnetic film having an easy magnetization plane effectively in a film plane, wherein a magnetization of the STL is capable of in-plane rotation, wherein a product of a saturation magnetization of the STL multiplied by a thickness of the STL is less than half a product of a magnetization of the FGL multiplied by a thickness of the FGL.