Invention Grant
- Patent Title: Magnetic read sensor using spin hall effect
- Patent Title (中): 磁性读取传感器采用旋转霍尔效应
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Application No.: US13764600Application Date: 2013-02-11
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Publication No.: US09099119B2Publication Date: 2015-08-04
- Inventor: Goran Mihajlovic , Petrus A. Van Der Heijden
- Applicant: HGST Netherlands B.V.
- Applicant Address: NL Amsterdam
- Assignee: HGST Netherlands B.V.
- Current Assignee: HGST Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Zilka-Kotab, PC
- Main IPC: G11B5/127
- IPC: G11B5/127 ; G11B5/37 ; H01L43/06 ; G01R33/07 ; G01R33/12

Abstract:
A magnetic sensor utilizing the spin Hall effect to polarize electrons for use in measuring a magnetic field. The sensor eliminates the need for a pinned layer structure or antiferromagnetic layer (AFM layer), thereby reducing gap thickness for increased data density. The sensor includes a non-magnetic, electrically conductive layer that is configured to accumulate electrons predominantly of one spin at a side thereof when a current flows there-through. A magnetic free layer is located adjacent to the side of the non-magnetic, electrically conductive layer. A change in the direction of magnetization in the free layer relative to the orientation of the spin polarized electrons causes a change in voltage output of the sensor.
Public/Granted literature
- US20140226239A1 MAGNETIC READ SENSOR USING SPIN HALL EFFECT Public/Granted day:2014-08-14
Information query
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