Invention Grant
- Patent Title: Resistive random access memory with electric-field strengthened layer and manufacturing method thereof
- Patent Title (中): 具有电场强化层的电阻随机存取存储器及其制造方法
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Application No.: US13457035Application Date: 2012-04-26
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Publication No.: US09099178B2Publication Date: 2015-08-04
- Inventor: Wei Zhang , Lin Chen , Peng Zhou , Qingqing Sun , Pengfei Wang
- Applicant: Wei Zhang , Lin Chen , Peng Zhou , Qingqing Sun , Pengfei Wang
- Applicant Address: CN Shanghai
- Assignee: Fudan University
- Current Assignee: Fudan University
- Current Assignee Address: CN Shanghai
- Agency: Jenkins, Wilson, Taylor & Hunt, P.A.
- Priority: CN2011101048588 20110603
- Main IPC: H01L29/86
- IPC: H01L29/86 ; H01L27/24 ; G11C13/00 ; H01L45/00
Abstract:
This invention belongs to the technical field of memories and specifically relates to a resistive random access memory structure with an electric-field strengthened layer and a manufacturing method thereof. The resistive random access memory in the present invention can include a top electrode, a bottom electrode and a composite layer which is placed between the top electrode and the bottom electrode and have a first resistive switching layer and a second resistive switching and electric-field strengthened layer; the second resistive switching and electric-field strengthened layer cab be adjacent to the first resistive switching layer and have a dielectric constant lower than that of the first resistive switching layer. The electric-field distribution in the RRAM unit is adjustable.
Public/Granted literature
- US20120305880A1 RESISTIVE RANDOM ACCESS MEMORY WITH ELECTRIC-FIELD STRENGTHENED LAYER AND MANUFACTURING METHOD THEREOF Public/Granted day:2012-12-06
Information query
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