Invention Grant
US09099184B2 Memory device and method of reading data from memory device using element graphs
有权
使用元素图从存储器件读取数据的存储器件和方法
- Patent Title: Memory device and method of reading data from memory device using element graphs
- Patent Title (中): 使用元素图从存储器件读取数据的存储器件和方法
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Application No.: US13607987Application Date: 2012-09-10
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Publication No.: US09099184B2Publication Date: 2015-08-04
- Inventor: Chang-Kyu Seol , Jun-Jin Kong
- Applicant: Chang-Kyu Seol , Jun-Jin Kong
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2011-0106634 20111018
- Main IPC: G11C16/12
- IPC: G11C16/12 ; G06F11/10 ; G11C16/26 ; G11C16/34

Abstract:
Data is read from memory cells, including at least one victim cell and at least one aggressor cell, using an element graph. Reading the data includes defining function nodes corresponding to probability density functions with respect to a first physical characteristic of the at least one victim cell and a second physical characteristic of the at least one aggressor cell, defining variable nodes corresponding to at least one first data value stored in the at least one victim cell and at least one second data value stored in the at least one aggressor cell, and defining edges connecting the function nodes and the variable nodes.
Public/Granted literature
- US20130094293A1 MEMORY DEVICE AND METHOD OF READING DATA FROM MEMORY DEVICE Public/Granted day:2013-04-18
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