A semiconductor memory apparatus includes a memory block to include memory cells to hold data; a precharge control unit to control precharging the memory cells; a row decoder to output a row selection signal identifying a row address of the memory cells; an integral circuit to integrate a signal level of the row selection signal for a same row address, and to have an integral characteristic where an integral value of the signal level becomes a predetermined value when the row selection signal for the same row address is consecutively output for a predetermined number of times; and a determination unit to determine whether the integral value of the integral circuit becomes the predetermined value or greater. The precharge control unit turns off precharging the memory cells when the integral value of the integral circuit becomes the predetermined value or greater.