Semiconductor device and method of fabricating the same

Invention Grant

US09099304B2 Semiconductor device and method of fabricating the same 有权

Title translation: 半导体装置及其制造方法

Please log in to see more content

Patent Title: Semiconductor device and method of fabricating the same
Patent Title (中): 半导体装置及其制造方法
Application No.: US14211789

Application Date: 2014-03-14
Publication No.: US09099304B2

Publication Date: 2015-08-04
Inventor: Dong-soo Lee , Eui-chul Hwang , Seong-ho Cho , Myoung-jae Lee , Sang-moon Lee , Sung-hun Lee , Mohammad Rakib Uddin , David Seo , Moon-seung Yang , Ji-hyun Hur
Applicant: Samsung Electronics Co., Ltd.
Applicant Address: KR
Assignee: SAMSUNG ELECTRONICS CO., LTD.
Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
Current Assignee Address: KR
Agency: Onello & Mello, LLP.
Priority: KR10-2013-0089832 20130729
Main IPC: H01L21/318
IPC: H01L21/318 ; H01L21/02 ; H01L29/20 ; H01L21/28 ; H01L29/51 ; H01L29/66 ; H01L29/78 ; H01L29/49

Semiconductor device and method of fabricating the same

Abstract:

A semiconductor device is provided that includes a diffusion barrier layer between a compound semiconductor layer and a dielectric layer, as well as a method of fabricating the semiconductor device, such that the semiconductor device includes a compound semiconductor layer; a dielectric layer; and a diffusion barrier layer including an oxynitride formed between the compound semiconductor layer and the dielectric layer.

Abstract(Chinese):

提供一种半导体器件，其包括在化合物半导体层和电介质层之间的扩散阻挡层，以及制造半导体器件的方法，使得半导体器件包括化合物半导体层; 电介质层; 以及包含在化合物半导体层和电介质层之间形成的氧氮化物的扩散阻挡层。

Public/Granted literature

US20150028458A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2015-01-29

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/314	......无机层（H01L21/3105，H01L21/32优先）
H01L21/318	.......由氮化物组成的无机层