Invention Grant
- Patent Title: Method for making epitaxial structure
- Patent Title (中): 制造外延结构的方法
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Application No.: US13713571Application Date: 2012-12-13
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Publication No.: US09099307B2Publication Date: 2015-08-04
- Inventor: Yang Wei , Shou-Shan Fan
- Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Novak Druce Connolly Bove + Quigg LLP
- Priority: CN201210122583 20120425
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A method for making an epitaxial structure includes following steps. A substrate having an epitaxial growth surface is provided. A first epitaxial layer is epitaxially grown on the epitaxial growth surface. A graphene layer is applied on the first epitaxial layer. A second epitaxial layer is epitaxially grown on the first epitaxial layer.
Public/Granted literature
- US20130288464A1 METHOD FOR MAKING EPTAXIAL STRUCTURE Public/Granted day:2013-10-31
Information query
IPC分类:
