Invention Grant
- Patent Title: Semiconductor wafer and method for manufacturing the same
- Patent Title (中): 半导体晶片及其制造方法
-
Application No.: US13695246Application Date: 2011-04-29
-
Publication No.: US09099308B2Publication Date: 2015-08-04
- Inventor: Giuseppe Abbondanza
- Applicant: Giuseppe Abbondanza
- Applicant Address: IT Agrate Brianza (MB)
- Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee Address: IT Agrate Brianza (MB)
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Priority: ITCT2010A0006 20100429
- International Application: PCT/EP2011/056817 WO 20110429
- International Announcement: WO2011/135065 WO 20111103
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/16 ; H01L29/20 ; H01L29/267
Abstract:
An embodiment of a method for manufacturing a semiconductor wafer includes providing a monocrystalline silicon wafer, epitaxially growing a first layer of a first material on the silicon wafer, and epitaxially growing a second layer of a second material on the first layer. For example, said first material may be monocrystalline silicon carbide, and said second material may be monocrystalline silicon.
Public/Granted literature
- US20130112995A1 SEMICONDUCTOR WAFER AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-05-09
Information query
IPC分类:
